The effects of the band gap and defects in silicon nitride on the carrier lifetime and the transmittance in c-Si solar cellsJUNG, Sungwook; GONG, Deayoung; JUNSIN YI et al.Solar energy materials and solar cells. 2011, Vol 95, Num 2, pp 546-550, issn 0927-0248, 5 p.Article

Low cost CBD ZnS antireflection coating on large area commercial mono-crystalline silicon solar cellsGANGOPADHYAY, U; KIM, Kyunghae; MANGALARAJ, D et al.Applied surface science. 2004, Vol 230, Num 1-4, pp 364-370, issn 0169-4332, 7 p.Article

Photoluminescence and morphological studies of porous siliconJAEHYEONG LEE; CHAKRABARTY, Kaustuv; JUNSIN YI et al.Applied surface science. 2003, Vol 211, Num 1-4, pp 373-378, issn 0169-4332, 6 p.Article

Metal silicide-templated growth of quality Si films for Schottky-diodesKIM, Joondong; JUNSIN YI; ANDERSON, Wayne A et al.Thin solid films. 2010, Vol 518, Num 22, pp 6510-6513, issn 0040-6090, 4 p.Article

Self textured transparent conductive oxide film for efficiency improvement in solar cellKIM, Doyoung; JUNSIN YI; KIM, Hyungjun et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7603, issn 0277-786X, isbn 978-0-8194-7999-0 0-8194-7999-3, 1Vol, 76030G.1-76030G.9Conference Paper

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickelTHANH NGA NGUYEN; VAN DUY NGUYEN; JUNG, Sungwook et al.Applied surface science. 2009, Vol 255, Num 19, pp 8252-8256, issn 0169-4332, 5 p.Article

Memory characteristics of poly-Si using MIC as an active layer on glass substratesTHANH NGA NGUYEN; JUNG, Sungwook; VAN DUY NGUYEN et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 10, issn 0022-3727, 105406.1-105406.6Article

Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applicationsDANG NGOC SON; NGUYEN VAN DUY; JUNG, Sungwook et al.Semiconductor science and technology. 2010, Vol 25, Num 8, issn 0268-1242, 085003.1-085003.5Article

Trapping Time Characteristics of Carriers in a-InGaZnO Thin-Film Transistors Fabricated at Low Temperatures for Next-Generation DisplaysVINH AI DAO; THANH THUY TRINH; JANG, Kyungsoo et al.Journal of electronic materials. 2013, Vol 42, Num 4, pp 711-715, issn 0361-5235, 5 p.Article

Optimization of fabrication process of high-efficiency and low-cost crystalline silicon solar cell for industrial applicationsLEE, Jaehyeong; LAKSHMINARAYAN, N; SURESH KUMAR DHUNGEL et al.Solar energy materials and solar cells. 2009, Vol 93, Num 2, pp 256-261, issn 0927-0248, 6 p.Article

Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film TransistorsKYUNGSOO JANG; RAJA, Jayapal; LEE, Youn-Jung et al.IEEE electron device letters. 2013, Vol 34, Num 9, pp 1151-1153, issn 0741-3106, 3 p.Article

Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cellsSHAHZADA QAMAR HUSSAIN; SUNBO KIM; SHIHYUN AHN et al.Solar energy materials and solar cells. 2014, Vol 122, pp 130-135, issn 0927-0248, 6 p.Article

Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devicesBAEK, Kyunghyun; JANG, Kyungsoo; LEE, Youn-Jung et al.Thin solid films. 2013, Vol 531, pp 349-353, issn 0040-6090, 5 p.Article

Processed optimization for excellent interface passivation quality of amorphous/crystalline silicon solar cellsSANGHO KIM; VINH AI DAO; YOUNGSEOK LEE et al.Solar energy materials and solar cells. 2013, Vol 117, pp 174-177, issn 0927-0248, 4 p.Article

Structural, optical and Raman scattering studies on DC magnetron sputtered titanium dioxide thin filmsKARUNAGARAN, B; KIM, Kyunghae; MANGALARAJ, D et al.Solar energy materials and solar cells. 2005, Vol 88, Num 2, pp 199-208, issn 0927-0248, 10 p.Conference Paper

Argon and nitrogen implantation effects on the structural and optical properties of vacuum evaporated cadmium sulphide thin filmsSENTHIL, K; MANGALARAJ, D; NARAYANDASS, Sa K et al.Semiconductor science and technology. 2002, Vol 17, Num 2, pp 97-103, issn 0268-1242Article

Diffused transmission and texture-induced defect with transparent conducting oxide front electrode of amorphous silicon solar cellHYEONGSIK PARK; IFTIQUAR, S. M; HEE WON KIM et al.Semiconductor science and technology. 2013, Vol 28, Num 11, issn 0268-1242, 115012.1-115012.6Article

The characteristics of carbon nanotubes grown at low temperature for electronic device applicationYONG SEOB PARK; JUNSIN YI; JAEHYEONG LEE et al.Thin solid films. 2013, Vol 546, pp 81-84, issn 0040-6090, 4 p.Conference Paper

Investigation of charge storage and retention characteristics of silicon nitride in NVM based on InGaZnO channels for System-on-Panel applicationsHONG HANH NGUYEN; JAYAPAL, Raja; NGOC SON DANG et al.Microelectronic engineering. 2012, Vol 98, pp 34-40, issn 0167-9317, 7 p.Article

A novel fabrication process of a gate offset nonvolatile memory on glass and the influence of the gate offset structure on the device characteristicsNGUYEN VAN DUY; LAKSHMINARAYAN, Nariangadu; JUNG, Sungwook et al.Solid-state electronics. 2011, Vol 55, Num 1, pp 8-12, issn 0038-1101, 5 p.Article

The effect of rear surface polishing to the performance of thin crystalline silicon solar cellsKIM, Youngkuk; JUNG, Sungwook; JU, Minkyu et al.Solar energy. 2011, Vol 85, Num 5, pp 1085-1090, issn 0038-092X, 6 p.Article

Embedded LTPS flash cells with oxide-nitride-oxynitride stack structure for realization of multi-function mobile flat panel displaysJUNG, Sungwook; KIM, Jaehong; SON, Hyukjoo et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 17, issn 0022-3727, 172006.1-172006.4Article

Space charge limited current, variable range hopping and mobility gap in thermally evaporated amorphous InSe thin filmsVISWANATHAN, C; GOPAL, S; THAMILSELVAN, M et al.Journal of materials science. Materials in electronics. 2004, Vol 15, Num 12, pp 787-792, issn 0957-4522, 6 p.Article

Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational rangeDAEWOO KIM; KYUNGSOO JANG; LEE, Youn-Jung et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105018.1-105018.5Article

Novel vapor texturing method for EFG silicon solar cell applicationsMINKYU JU; BALAJI, Nagarajan; LEE, Youn-Jung et al.Solar energy materials and solar cells. 2012, Vol 107, pp 364-370, issn 0927-0248, 7 p.Article